LASER QUENCHED AND IMPURITY INDUCED METASTABLE SI(111)1X1 SURFACES

[61] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 635 - 637

[62] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421

[63] LASER ANNEALING SI COVERED WITH A METAL-FILM - TEST FOR GROWTH FROM THE MELT [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (04) : 283 - 283

[64] VANVECHTEN JA, 1980, J PHYS-PARIS, V41, P15

[65] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 455 - 458

[66] VIDICON-CAMERA PARALLEL-DETECTION SYSTEM FOR ANGLE-RESOLVED ELECTRON-SPECTROSCOPY [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1979, 50 (10) : 1249 - 1255

[67] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 738 - 749

[68] DYNAMICS OF DENSE LASER-INDUCED PLASMAS [J]. PHYSICAL REVIEW B, 1980, 21 (06) : 2415 - 2425

[69] ZEHNER DM, 1980, SURF SCI, V92, pL67, DOI 10.1016/0039-6028(80)90205-8

[70] PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 56 - 59

[61] CALCULATION OF THE DYNAMICS OF SURFACE MELTING DURING LASER ANNEALING [J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 635 - 637

[62] REASONS TO BELIEVE PULSED LASER ANNEALING OF SI DOES NOT INVOLVE SIMPLE THERMAL MELTING [J]. PHYSICS LETTERS A, 1979, 74 (06) : 417 - 421

[63] LASER ANNEALING SI COVERED WITH A METAL-FILM - TEST FOR GROWTH FROM THE MELT [J]. PHYSICAL REVIEW LETTERS, 1981, 47 (04) : 283 - 283

[64] VANVECHTEN JA, 1980, J PHYS-PARIS, V41, P15

[65] THEORETICAL-ANALYSIS OF THERMAL AND MASS-TRANSPORT IN ION-IMPLANTED LASER-ANNEALED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 455 - 458

[66] VIDICON-CAMERA PARALLEL-DETECTION SYSTEM FOR ANGLE-RESOLVED ELECTRON-SPECTROSCOPY [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1979, 50 (10) : 1249 - 1255

[67] SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 738 - 749

[68] DYNAMICS OF DENSE LASER-INDUCED PLASMAS [J]. PHYSICAL REVIEW B, 1980, 21 (06) : 2415 - 2425

[69] ZEHNER DM, 1980, SURF SCI, V92, pL67, DOI 10.1016/0039-6028(80)90205-8

[70] PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (01) : 56 - 59