NUMERICAL-SIMULATION OF SIDEGATING EFFECT IN GAAS-MESFETS

被引：23

作者：

CHANG, SJ ^{[1
]}

LEE, CP ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1993年 / 40卷 / 04期

关键词：

D O I：

10.1109/16.202780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two-dimensional simulation of the sidegating effect in GaAs MESFET's has been performed. The result confirms that Schottky contacts on a semi-insulating substrate cause serious high substrate leakage current and drain current reduction in GaAs MESFET's. The threshold behavior in sidegating effect is found to correlate with the conduction behavior of the Schottky-i-n(sidegate) structure when the sidegate is negatively biased. Shielding and enhancement of the sidegating effect by the Schottky contacts have also been studied and the results agree with the experimental findings. Besides, the presence of hole traps in the semi-insulating substrate is found to be essential to the sidegating effect.

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收藏

页码：698 / 704

页数：7

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