SURFACE-EMITTING LASERS GROWN BY CHEMICAL BEAM EPITAXY

被引：15

作者：

MIYAMOTO, T

UCHIDA, T

YOKOUCHI, N

IGA, K

机构：

[1] Precision and Intelligence Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90411-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have established a chemical beam epitaxy technology for the growth of lambda = 1.55 mum GaInAsP/InP surface emitting laser wafers by confirming the controllability of composition and thickness, and doping conditions. We investigated the optical and electrical properties of Be-doped InP, necessary for obtaining good surface morphology and low electrical resistance. The crystal quality was characterized by making stripe lasers, and the growth of GaInAsP/InP multilayer reflectors was attempted. Also, the first lasing of 1.5 mum surface emitting lasers has been demonstrated by chemical beam epitaxy (CBE) and a very low threshold was realized using a hybrid mirror.

引用

页码：210 / 215

页数：6

共 15 条

[1] NEAR ROOM-TEMPERATURE CONTINUOUS-WAVE LASING CHARACTERISTICS OF GAINASP/INP SURFACE-EMITTING LASER [J].