PLANARIZED SOLID-STATE EPITAXIAL-GROWTH OF SI AND ITS EFFECT ON SCHOTTKY-BARRIER DIODES

[1] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 290 - &

[2] INTERFACIAL IMPURITIES AND REACTION BETWEEN SI AND EVAPORATED AL [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 4071 - 4072

[3] BOATRIGHT RL, 1976, J APPL PHYS, V47, P2260, DOI 10.1063/1.323015

[4] THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 87 - 89

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[6] CARD HC, 1974, METAL SEMICONDUCT 22

[7] BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 119 - &

[8] JACKSON DM, 1965, T METALL SOC AIME, V233, P596

[9] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 171 - &

[10] LOW-PRESSURE SILICON EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 903 - 908

[1] NATURE OF BARRIER HEIGHT VARIATIONS IN ALLOYED AL-SI SCHOTTKY-BARRIER DIODES [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 290 - &

[2] INTERFACIAL IMPURITIES AND REACTION BETWEEN SI AND EVAPORATED AL [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 4071 - 4072

[3] BOATRIGHT RL, 1976, J APPL PHYS, V47, P2260, DOI 10.1063/1.323015

[4] THERMALLY-INDUCED CHANGES IN BARRIER HEIGHTS OF ALUMINUM CONTACTS TO PARA-TYPE AND NORMAL-TYPE SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 87 - 89

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +

[6] CARD HC, 1974, METAL SEMICONDUCT 22

[7] BEHAVIOR OF AL-SI SCHOTTKY-BARRIER DIODES UNDER HEAT-TREATMENT [J]. SOLID-STATE ELECTRONICS, 1973, 16 (01) : 119 - &

[8] JACKSON DM, 1965, T METALL SOC AIME, V233, P596

[9] PRECIPITATION OF SI FROM AL METALLIZATION OF INTEGRATED-CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1972, 20 (04) : 171 - &

[10] LOW-PRESSURE SILICON EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 903 - 908