A MODEL FOR ANALYZING THE INTERFACE PROPERTIES OF A SEMICONDUCTOR INSULATOR SEMICONDUCTOR STRUCTURE .2. TRANSIENT CAPACITANCE TECHNIQUE

被引：6

作者：

CHEN, HS ^{[1
]}

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 07期

关键词：

D O I：

10.1109/16.141242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A bias-scan deep-level transient spectroscopy (DLTS) for measuring interface states in a semiconductor-insulator-semiconductor (SIS) capacitor structure is described. By introducing a charge coupling factor between the film/oxide (F/O) and the substrate/oxide (S/O) interfaces, we were able to extract interface trap densities from the measured transient signals. Using this technique we have determined the interface trap densities and capture cross sections at both the F/O and S/O interfaces of SIMOX (Separation by IMplantation of OXygen) based SIS capacitors.

引用

收藏

页码：1747 / 1751

页数：5

相关论文

共 11 条

[1]

BRADY FT, 1988, P IEEE SOS SOI TECHN, P63

[2] A MODEL FOR ANALYZING THE INTERFACE PROPERTIES OF A SEMICONDUCTOR INSULATOR SEMICONDUCTOR STRUCTURE .1. CAPACITANCE AND CONDUCTANCE TECHNIQUES [J].

CHEN, HS ;

LI, SS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) :1740-1746

[3] BULK TRAPS IN SILICON-ON-SAPPHIRE BY CONDUCTANCE DLTS [J].

CHEN, JW ;

KO, RJ ;

BRZEZINSKI, DW ;

FORBES, L ;

DELLOCA, CJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (03) :299-304

[4] ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES [J].

JOHNSON, NM .

APPLIED PHYSICS LETTERS, 1979, 34 (11) :802-804

[5] TEMPERATURE AND ENERGY DEPENDENCES OF CAPTURE CROSS-SECTIONS AT SURFACE-STATES IN SI METAL-OXIDE-SEMICONDUCTOR DIODES MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY [J].

KATSUBE, T ;

KAKIMOTO, K ;

IKOMA, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3504-3508

[6] CHARACTERIZATION OF SURFACE-STATES IN MOS CAPACITORS BY A MODIFIED DLTS TECHNIQUE [J].

KUMAR, V ;

IYER, SB .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (02) :637-640

[7] BULK TRAPS IN ULTRATHIN SIMOX MOSFETS BY CURRENT DLTS [J].

MCLARTY, PK ;

IOANNOU, DE ;

COLINGE, JP .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) :545-547

[8] DEEP LEVEL TRANSIENT SPECTROSCOPY STUDIES OF EPITAXIAL SILICON LAYERS ON SILICON-ON-INSULATOR SUBSTRATES FORMED BY OXYGEN IMPLANTATION [J].

MCLARTY, PK ;

COLE, JW ;

GALLOWAY, KF ;

IOANNOU, DE ;

BERNACKI, SE .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1078-1079

[9] CAPACITANCE TRANSIENT SPECTROSCOPY [J].

MILLER, GL ;

LANG, DV ;

KIMERLING, LC .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 :377-448

[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+