LOW-THRESHOLD GAAS/ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY ON OXIDE-MASKED SI SUBSTRATES

被引：4

作者：

BURNS, GF ^{[1
]}

BLANCK, H ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 25期

关键词：

D O I：

10.1063/1.102870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-threshold GaAs/AlGaAs lasers have, for the first time, been grown selectively on 10 μm stripe openings patterned in oxide on Si substrates. Lateral current confinement provided by side facets reduces edge leakage, and results in threshold currents as low as 75 mA for a 10 μm by 210 μm device, a nearly two-fold improvement over comparable etched ridge waveguide lasers. Spectrum measurements show single longitudinal mode emission near 850 nm. This adaptation of selective heteroepitaxial growth for lateral current confinement of AlGaAs/GaAs lasers on Si substrates, adopted from similar work on GaAs substrates, offers potential for significant threshold current reductions of lasers integrable with Si.

引用

页码：2499 / 2501

页数：3

共 12 条

[1] HIGH-FREQUENCY MODULATION OF ALGAAS/GAAS LASERS GROWN ON SI SUBSTRATE BY MOLECULAR-BEAM EPITAXY
CHEN, HZ
PASLASKI, J
YARIV, A
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (08) : 605 - 606
[2] LOW-THRESHOLD OPERATION OF ALGAAS/GAAS MULTIPLE QUANTUM-WELL LASERS GROWN ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY
CHONG, TC
FONSTAD, CG
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (04) : 221 - 223
[3] OPTICAL CHARACTERIZATION OF STRESS IN NARROW GAAS STRIPES ON PATTERNED SI SUBSTRATES
DEBOECK, J
DENEFFE, K
CHRISTEN, J
ARENT, DJ
BORGHS, G
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (04) : 365 - 367
[4] ULTRALOW-THRESHOLD GRADED-INDEX SEPARATE-CONFINEMENT SINGLE QUANTUM-WELL BURIED HETEROSTRUCTURE (AL,GA)AS LASERS WITH HIGH REFLECTIVITY COATINGS
DERRY, PL
YARIV, A
LAU, KY
BARCHAIM, N
LEE, K
ROSENBERG, J
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (25) : 1773 - 1775
[5] THERMAL-BEHAVIOR AND STABILITY OF ROOM-TEMPERATURE CONTINUOUS ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASERS GROWN ON SI
HALL, DC
DEPPE, DG
HOLONYAK, N
MATYI, RJ
SHICHIJO, H
EPLER, JE
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (06) : 2854 - 2860
[6] GAAS-GAALAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE LASER-DIODES SELECTIVELY GROWN BY MOLECULAR-BEAM EPITAXY ON SIO2-MASKED SUBSTRATES
HONG, JM
WU, MC
WANG, S
WANG, WI
CHANG, LL
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (12) : 886 - 888
[7] INNER-STRIPE ALGAAS/GAAS LASER DIODE BY SINGLE-STEP MOLECULAR-BEAM EPITAXY
IMANAKA, K
IMAMOTO, H
SATO, F
ASAI, M
SHIMURA, M
[J]. ELECTRONICS LETTERS, 1987, 23 (05) : 209 - 210
[8] INITIAL-STAGE AND DOMAIN-STRUCTURE OF GAAS GROWN ON SI(100) BY MOLECULAR-BEAM EPITAXY
KAWABE, M
UEDA, T
TAKASUGI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (02): : L114 - L116
[9] DOUBLE-HTEROSTRUCTURE GAAS/ALGAAS LASERS ON SI SUBSTRATES WITH REDUCED THRESHOLD CURRENT AND BUILT-IN INDEX GUIDING BY SELECTIVE-AREA MOLECULAR-BEAM EPITAXY
LEE, HP
LIU, XM
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (11) : 1014 - 1016
[10] EFFECT OF AS4 OVERPRESSURE ON INITIAL GROWTH OF GALLIUM-ARSENIDE ON SILICON BY MOLECULAR-BEAM EPITAXY
PALMER, JE
BURNS, G
FONSTAD, CG
THOMPSON, CV
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (10) : 990 - 992

← 1 2 →