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ELECTRICAL CHARACTERISTICS OF POLYCRYSTALLINE SILICON-SILICON NITRIDE SILICON DIOXIDE SILICON STRUCTURES
被引:4
作者
:
MAEKAWA, M
论文数:
0
引用数:
0
h-index:
0
MAEKAWA, M
机构
:
来源
:
JAPANESE JOURNAL OF APPLIED PHYSICS
|
1972年
/ 11卷
/ 09期
关键词
:
D O I
:
10.1143/JJAP.11.1251
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:1251 / &
相关论文
共 28 条
[1]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
[J].
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
;
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
;
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
;
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
:733
-&
[2]
BHOL SR, 1963, RCA REV DEC, P511
[3]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
[J].
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
;
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
;
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
:948
-&
[4]
THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS
[J].
BURGESS, TE
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BURGESS, TE
;
BAUM, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BAUM, JC
;
FOWKES, FM
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
FOWKES, FM
;
HOLMSTROM, R
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
HOLMSTROM, R
;
SHIRN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
SHIRN, GA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
:1005
-+
[5]
PREPARATION AND PROPERTIES OF AMORPHOUS SILICON
[J].
CHITTICK, RC
论文数:
0
引用数:
0
h-index:
0
CHITTICK, RC
;
ALEXANDE.JH
论文数:
0
引用数:
0
h-index:
0
ALEXANDE.JH
;
STERLING, HF
论文数:
0
引用数:
0
h-index:
0
STERLING, HF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(01)
:77
-&
[6]
PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
[J].
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
;
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
;
GRUBER, GA
论文数:
0
引用数:
0
h-index:
0
GRUBER, GA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
:717
-&
[7]
PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
[J].
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
;
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
;
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
.
SOLID-STATE ELECTRONICS,
1967,
10
(09)
:897
-&
[8]
STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
[J].
DALTON, JV
论文数:
0
引用数:
0
h-index:
0
DALTON, JV
;
DROBEK, J
论文数:
0
引用数:
0
h-index:
0
DROBEK, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
:865
-+
[9]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
;
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
:300
-&
[10]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
;
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
;
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
:997
-&
←
1
2
3
→
共 28 条
[1]
SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
[J].
BEAN, KE
论文数:
0
引用数:
0
h-index:
0
BEAN, KE
;
GLEIM, PS
论文数:
0
引用数:
0
h-index:
0
GLEIM, PS
;
YEAKLEY, RL
论文数:
0
引用数:
0
h-index:
0
YEAKLEY, RL
;
RUNYAN, WR
论文数:
0
引用数:
0
h-index:
0
RUNYAN, WR
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
:733
-&
[2]
BHOL SR, 1963, RCA REV DEC, P511
[3]
ELECTRICAL CHARACTERISTICS OF SILICON NITRIDE FILMS PREPARED BY SILANE-AMMONIA REACTION
[J].
BROWN, GA
论文数:
0
引用数:
0
h-index:
0
BROWN, GA
;
ROBINETT.WC
论文数:
0
引用数:
0
h-index:
0
ROBINETT.WC
;
CARLSON, HG
论文数:
0
引用数:
0
h-index:
0
CARLSON, HG
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(09)
:948
-&
[4]
THERMAL DIFFUSION OF SODIUM IN SILICON NITRIDE SHIELDED SILICON OXIDE FILMS
[J].
BURGESS, TE
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BURGESS, TE
;
BAUM, JC
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
BAUM, JC
;
FOWKES, FM
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
FOWKES, FM
;
HOLMSTROM, R
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
HOLMSTROM, R
;
SHIRN, GA
论文数:
0
引用数:
0
h-index:
0
机构:
Sprague Electric Company, North Adams, Massachusetts
SHIRN, GA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
:1005
-+
[5]
PREPARATION AND PROPERTIES OF AMORPHOUS SILICON
[J].
CHITTICK, RC
论文数:
0
引用数:
0
h-index:
0
CHITTICK, RC
;
ALEXANDE.JH
论文数:
0
引用数:
0
h-index:
0
ALEXANDE.JH
;
STERLING, HF
论文数:
0
引用数:
0
h-index:
0
STERLING, HF
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(01)
:77
-&
[6]
PREPARATION AND PROPERTIES OF AMORPHOUS SILICON NITRIDE FILMS
[J].
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
;
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
;
GRUBER, GA
论文数:
0
引用数:
0
h-index:
0
GRUBER, GA
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1967,
114
(07)
:717
-&
[7]
PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
[J].
CHU, TL
论文数:
0
引用数:
0
h-index:
0
CHU, TL
;
SZEDON, JR
论文数:
0
引用数:
0
h-index:
0
SZEDON, JR
;
LEE, CH
论文数:
0
引用数:
0
h-index:
0
LEE, CH
.
SOLID-STATE ELECTRONICS,
1967,
10
(09)
:897
-&
[8]
STRUCTURE AND SODIUM MIGRATION IN SILICON NITRIDE FILMS
[J].
DALTON, JV
论文数:
0
引用数:
0
h-index:
0
DALTON, JV
;
DROBEK, J
论文数:
0
引用数:
0
h-index:
0
DROBEK, J
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(08)
:865
-+
[9]
ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
;
FLEMING, PJ
论文数:
0
引用数:
0
h-index:
0
FLEMING, PJ
;
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
CASTRO, PL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1968,
115
(03)
:300
-&
[10]
CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
DEAL, BE
;
MACKENNA, EL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
MACKENNA, EL
;
CASTRO, PL
论文数:
0
引用数:
0
h-index:
0
机构:
Fairchild Semiconductor Research and Development Laboratory, Palo Alto, California
CASTRO, PL
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1969,
116
(07)
:997
-&
←
1
2
3
→