DEEP LEVEL TRANSIENT SPECTROSCOPY ON SINGLE, ISOLATED INTERFACE TRAPS IN FIELD-EFFECT TRANSISTORS

被引：21

作者：

KARWATH, A

SCHULZ, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 08期

关键词：

D O I：

10.1063/1.99388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：634 / 636

页数：3

相关论文

共 10 条

[1] CAPTURE AND EMISSION KINETICS OF INDIVIDUAL SI-SIO2 INTERFACE STATE S
KIRTON, MJ
UREN, MJ
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1270 - 1272
[2] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[3] DOUBLE CORRELATION TECHNIQUE (DDLTS) FOR ANALYSIS OF DEEP LEVEL PROFILES IN GAAS AND GAAS0.6P0.4
LEFEVRE, H
SCHULZ, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (07) : 973 - 978
[4] CAPACITANCE TRANSIENT SPECTROSCOPY
MILLER, GL
LANG, DV
KIMERLING, LC
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1977, 7 : 377 - 448
[5] TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
JOHNSON, NM
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 622 - 625
[6] INTERFACE STATES AT THE SIO2-SI INTERFACE
SCHULZ, M
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 422 - 455
[7] EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
JOHNSON, NM
[J]. SOLID STATE COMMUNICATIONS, 1978, 25 (07) : 481 - 484
[8] TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE
SCHULZ, M
KLAUSMANN, E
[J]. APPLIED PHYSICS, 1979, 18 (02): : 169 - 175
[9] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[10] 1/F AND RANDOM TELEGRAPH NOISE IN SILICON METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
UREN, MJ
DAY, DJ
KIRTON, MJ
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1195 - 1197