LOW-TEMPERATURE PLASMA ANODIZATION OF TANTALUM SILICIDES

被引：7

作者：

PERRIERE, J

SIEJKA, J

CLIMENT, A

NAVARRO, E

MARTINEZDUART, JM

机构：

[1] UNIV AUTONOMA MADRID,CSIC,DEPT FIS APLICADA,E-28049 MADRID,SPAIN

[2] UNIV AUTONOMA MADRID,INST FIS ESTADO SOLIDO,E-28049 MADRID,SPAIN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.337896

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2656 / 2662

页数：7

共 23 条

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[18] TRANSPORT NUMBER MEASUREMENTS DURING PLASMA ANODIZATION OF SI, GAAS, AND ZRSI2 [J].

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[20] OXIDATION OF TANTALUM DISILICIDE POLYCRYSTALLINE SILICON STRUCTURES IN DRY O-2 [J].

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