VISIBLE VS NEAR-INFRARED ELLIPSOMETRY FOR THE INVESTIGATION OF AMORPHOUS-SILICON FILMS PRODUCED BY ION-IMPLANTATION

被引:2
作者
SIMARDNORMANDIN, M [1 ]
FEW, IS [1 ]
KALNITSKY, A [1 ]
NORMANDIN, R [1 ]
MARTE, C [1 ]
BEAULIEU, Y [1 ]
机构
[1] NATL RES COUNCIL CANADA,DIV PHYS,OTTAWA K1A 0R6,ONTARIO,CANADA
关键词
D O I
10.1149/1.2100759
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1794 / 1798
页数:5
相关论文
共 23 条
[11]   AN INVESTIGATION OF ION-BOMBARDED SILICON BY ELLIPSOMETRY AND CHANNELING EFFECT [J].
LOHNER, T ;
MEZEY, G ;
KOTAI, E ;
MANUABA, A ;
PASZTI, F ;
DEVENYI, A ;
GYULAI, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 199 (1-2) :405-408
[12]   CHARACTERIZATION OF ION-IMPLANTED SILICON BY ELLIPSOMETRY AND CHANNELING [J].
LOHNER, T ;
MEZEY, G ;
KOTAI, E ;
PASZTI, F ;
MANUABA, A ;
GYULAI, J .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY) :615-620
[14]  
MCCRACKIN FL, 1969, NBS479 TECH NOT
[15]  
MO D, 1982, CHINESE PHYS, V2, P915
[16]   ELLIPSOMETRIC MEASUREMENT OF DAMAGE DEPTH PROFILES FOR ION-BEAM PROCESSED SI SURFACE-LAYER [J].
OHIRA, F ;
ITAKURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :42-46
[17]   THE NATURE OF DEFECT LAYER FORMATION FOR ARSENIC ION-IMPLANTATION [J].
PRUSSIN, S ;
MARGOLESE, DI ;
TAUBER, RN .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2316-2326
[18]  
QIAN YH, 1982, CHINESE PHYS, V2, P504
[19]   VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION [J].
SEIDEL, TE ;
PASTEUR, GA ;
TSAI, JCC .
APPLIED PHYSICS LETTERS, 1976, 29 (10) :648-651
[20]  
SILVA RM, 1986, OPT NEWS, V12, P9