STRUCTURE AND STABILITY OF THE DX-CENTERS IN GAAS AND INP

被引：1

作者：

CHANG, KJ

CHEONG, BH

机构：

来源：

MODERN PHYSICS LETTERS B | 1995年 / 9卷 / 09期

关键词：

D O I：

10.1142/S0217984995000462

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We review some of the recent theoretical studies on the atomic structure, the stability, and the vibrational modes of donor-induced defect levels in GaAs and InP. For Si and S donors, the microscopic origin of the DX center is investigated and a review is given of the shallow-to-deep DX level transition under hydrostatic pressure. We also discuss the band structure and the chemical bonding effects on the stability of donor impurities, which are associated with broken-bond and breathing-mode lattice relaxations.

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页码：511 / 530

页数：20

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