STRESS MEASUREMENTS ON MULTILEVEL THIN-FILM DIELECTRIC LAYERS USED IN SI INTEGRATED-CIRCUITS

被引：3

作者：

CHEN, YS

FATEMI, H

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573863

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：645 / 649

页数：5

共 10 条

[1] STRESS IN CHEMICAL-VAPOR-DEPOSITED SIO2 AND PLASMA-SINX FILMS ON GAAS AND SI
BLAAUW, C
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) : 5064 - 5068
[2] STRESS EFFECTS IN BORON-IMPLANTED POLYSILICON FILMS
CHOI, MS
HEARN, EW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2443 - 2446
[3] INTERNAL STRESSES IN MULTILAYERED STRUCTURES
GHATE, PB
HALL, LH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) : 491 - &
[4] A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON
GUCKEL, H
RANDAZZO, T
BURNS, DW
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) : 1671 - 1675
[5] STRESS IN POLYCRYSTALLINE AND AMORPHOUS-SILICON THIN-FILMS
HOWE, RT
MULLER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) : 4674 - 4675
[6] EFFECT OF PHOSPHORUS DOPING ON STRESS IN SILICON AND POLYCRYSTALLINE SILICON
MURARKA, SP
RETAJCZYK, TF
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) : 2069 - 2072
[7] THERMAL-STRESS IN CVD PSG AND SIO2-FILMS ON SILICON SUBSTRATES
SHIMBO, M
MATSUO, T
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 135 - 138
[8] TEMPERATURE-DEPENDENCE OF STRESSES IN CHEMICAL VAPOR-DEPOSITED VITREOUS FILMS
SHINTANI, A
SUGAKI, S
NAKASHIMA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4197 - 4205
[9] THERMAL-STRESSES AND CRACKING RESISTANCE OF DIELECTRIC FILMS (SIN, SI3N4, AND SIO2) ON SI SUBSTRATES
SINHA, AK
LEVINSTEIN, HJ
SMITH, TE
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) : 2423 - 2426
[10] TEMPERATURE-DEPENDENCE OF STRESSES IN ALUMINUM FILMS ON OXIDIZED SILICON SUBSTRATES
SINHA, AK
SHENG, TT
[J]. THIN SOLID FILMS, 1978, 48 (01) : 117 - 126

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