DEEP LEVELS IN GAAS GROWN ON SI DURING RAPID THERMAL ANNEALING

被引：1

作者：

CHO, HY ^{[1
]}

KIM, EK ^{[1
]}

KIM, Y ^{[1
]}

MIN, SK ^{[1
]}

YOON, JH ^{[1
]}

CHOH, SH ^{[1
]}

机构：

[1] UNIV KOREA, DEPT PHYS, SEOUL 136701, SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.102705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Deep levels in GaAs on Si substrates grown by metalorganic chemical vapor deposition (MOCVD) were studied during infrared rapid thermal annealing. For GaAs layers on Si after annealing at 850 °C for 20 s, three electron deep levels at 0.36, 0.27, and 0.20 eV below the conduction band were created as the dominant deep levels. Especially, the 0.36 eV level was found to increase up to 40% of the donor concentration as the thickness of Si substrates increased. These results indicate that rapid thermal annealing of GaAs on Si may induce high-density deep levels due to a biaxial tensile stress caused by the difference in thermal expansion coefficients.

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页码：761 / 763

页数：3

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