ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS-BASED PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES

被引：1

作者：

THOMPSON, AG

MAO, BY

LEE, GY

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2208 / 2210

页数：3

共 9 条

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