PHOSPHORUS DOPED POLY SILICON FOR DOUBLE POLY STRUCTURES .2. ELECTRICAL CHARACTERISTICS

被引：5

作者：

HENDRIKS, M ^{[1
]}

MAVERO, C ^{[1
]}

机构：

[1] SGS THOMSON MICROELECTR,I-20041 AGRATE BRIANZA,ITALY

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 05期

关键词：

D O I：

10.1149/1.2085809

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The breakdown behavior and I/V characteristics of tunnel oxide and interpoly oxide are investigated for double poly structures prepared by five different deposition and doping methods. The in situ phosphorus-doped amorphous silicon film showed the best overall results, alpha-Si doped by ion implantation is the second best choice, but this only holds for the low implantation dose applied. The breakdown field of the interpoly oxide exhibits a maximum value of 8.8 MV/cm at a doping level of about 5 x 10(19) atom/cm3. The relation between V(BD) and doping level is not understood in detail. The Q(BD) of the interpoly oxide continuously decreases from a value of 5 C/cm2 for lightly doped samples to a value of 1.5 C/cm2 for a doping level of 5 x 10(20) atom/cm3.

引用

收藏

页码：1470 / 1474

页数：5

相关论文

共 19 条

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J].

ANDERSON, RM ;

KERR, DR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) :4834-4836

[2] CHARGE TRAPPING IN OXIDE GROWN ON POLYCRYSTALLINE SILICON LAYERS [J].

AVNI, E ;

ABRAMSON, O ;

SONNENBLICK, Y ;

SHAPPIR, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (01) :182-186

[3] TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE POLYCRYSTALLINE SILICON-SIO2 INTERFACE [J].

BRAVMAN, JC ;

SINCLAIR, R .

THIN SOLID FILMS, 1983, 104 (1-2) :153-161

[4] PHOSPHORUS DEPTH PROFILES IN THERMALLY OXIDIZED P-DOPED POLYSILICON [J].

CHANG, CC ;

SHENG, TT ;

SHANKOFF, TA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (05) :1168-1171

[5] INTERFACE EFFECTS AND HIGH CONDUCTIVITY IN OXIDES GROWN FROM POLYCRYSTALLINE SILICON [J].

DIMARIA, DJ ;

KERR, DR .

APPLIED PHYSICS LETTERS, 1975, 27 (09) :505-507

[6] SURFACE-ROUGHNESS AND ELECTRICAL-CONDUCTION OF OXIDE POLYSILICON INTERFACES [J].

FARAONE, L ;

HARBEKE, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (07) :1410-1413

[7] CHARACTERIZATION OF THERMALLY OXIDIZED N+ POLYCRYSTALLINE SILICON [J].

FARAONE, L ;

VIBRONEK, RD ;

MCGINN, JT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :577-583

[8]

Ghidini G., 1986, Insulating Films on Semiconductors. Proceedings of the International Conference INFOS 85, P141

[9] ELECTRICAL-CONDUCTION AND BREAKDOWN IN OXIDES OF POLYCRYSTALLINE SILICON AND THEIR CORRELATION WITH INTERFACE TEXTURE [J].

HEIMANN, PA ;

MURARKA, SP ;

SHENG, TT .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6240-6245

[10] SILICON OXIDATION STUDIES - MORPHOLOGICAL ASPECTS OF THE OXIDATION OF POLYCRYSTALLINE SILICON [J].

IRENE, EA ;

TIERNEY, E ;

DONG, DW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :705-713