Laser-induced metal-organic chemical vapor deposition (MOCVD) of Cu(hfac)(TMVS) on amorphous Teflon AF1600: an XPS study of the interface

被引：16

作者：

Popovici, D

Czeremuzkin, G

Meunier, M

Sacher, E

机构：

[1] Ecole Polytech, Grp Rech Phys & Technol Couches Minces, Montreal, PQ H3C 3A7, Canada

[2] Ecole Polytech, Dept Genie Phys, Montreal, PQ H3C 3A7, Canada

来源：

APPLIED SURFACE SCIENCE | 1998年 / 126卷 / 3-4期

基金：

加拿大自然科学与工程研究理事会;

关键词：

laser-induced Metal-Organic Chemical Vapor Deposition (MOCVD); amorphous Teflon AF1600; XPS study;

D O I：

10.1016/S0169-4332(98)00009-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Pulsed KrF excimer laser radiation (248 nm) was used to activate copper deposition from Cu(hfac)(TMVS) onto Teflon AF1600. The interface was examined using X-ray photoelectron spectroscopy (XPS) for thicknesses up to several monolayers. We found that Teflon carbons are the only substrate atoms involved in chemical bonding. Cu-0 and Cu-1-hfac were found to be uniformly distributed throughout the deposited film with additional Cu-1-C closer to the substrate surface. (C) 1998 Elsevier Science B.V.

引用

页码：198 / 204

页数：7

共 15 条

[1] CARRIER-GAS EFFECTS ON CHARACTERISTICS OF COPPER CHEMICAL-VAPOR-DEPOSITION USING HEXAFLUORO-ACETYLACETONATE-COPPER(1) TRIMETHYLVINYLSILANE [J].