Origin of room temperature ferromagnetism in homogeneous (In,Mn)As thin films

被引：19

作者：

Blattner, AJ ^{[1
]}

Prabhumirashi, PL ^{[1
]}

Dravid, VP ^{[1
]}

Wessels, BW ^{[1
]}

机构：

[1] Northwestern Univ, Ctr Mat Res, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 259卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

metalorganic vapor phase epitaxy; indium manganese arsenide; diluted magnetic semiconductors; spintronics;

D O I：

10.1016/S0022-0248(03)01569-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The microstructure of (In, Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy based techniques were used to investigate phase purity and compositional homogeneity. Microanalysis of an In1-xMnxAs film, with x = 0.01 and a Curie temperature of 330 K exhibited a homogeneous distribution of Mn. High Mn concentration films with x = 0.20 exhibited MnAs precipitates within the (In,Mn)As matrix. The analysis indicates that room temperature ferromagnetic, single-phase (In,Mn)As can be formed by MOVPE. The origin of ferromagnetism is attributed to (In,Mn)As solid solution rather than distinct secondary Mn-rich magnetic phase(s). (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：8 / 11

页数：4

共 11 条

[1] MAGNETIC DISORDER AS A FIRST-ORDER PHASE TRANSFORMATION [J].

BEAN, CP ;

RODBELL, DS .

PHYSICAL REVIEW, 1962, 126 (01) :104-+

[2] Ferromagnetism in (In,Mn)As diluted magnetic semiconductor thin films grown by metalorganic vapor phase epitaxy [J].

Blattner, AJ ;

Wessels, BW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04) :1582-1585

[3] Growth and characterization of OMVPE grown (In,Mn)As diluted magnetic semiconductor [J].

Blattner, AJ ;

Lensch, J ;

Wessels, BW .

JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (11) :1408-1411

[4]

BLATTNER AJ, 2002, IN PRESS APPL SURF S

[5] Ferromagnetic order induced by photogenerated carriers in magnetic III-V semiconductor heterostructures of (In,Mn)As/GaSb [J].

Koshihara, S ;

Oiwa, A ;

Hirasawa, M ;

Katsumoto, S ;

Iye, Y ;

Urano, C ;

Takagi, H ;

Munekata, H .

PHYSICAL REVIEW LETTERS, 1997, 78 (24) :4617-4620

[6] Light-induced ferromagnetism in III-V-based diluted magnetic semiconductor heterostructures [J].

Munekata, H ;

Abe, T ;

Koshihara, S ;

Oiwa, A ;

Hirasawa, M ;

Katsumoto, S ;

Iye, Y ;

Urano, C ;

Takagi, H .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (08) :4862-4864

[7] Electric-field control of ferromagnetism [J].

Ohno, H ;

Chiba, D ;

Matsukura, F ;

Omiya, T ;

Abe, E ;

Dietl, T ;

Ohno, Y ;

Ohtani, K .

NATURE, 2000, 408 (6815) :944-946

[8] Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb [J].

Oiwa, A ;

Slupinski, T ;

Munekata, H .

APPLIED PHYSICS LETTERS, 2001, 78 (04) :518-520

[9] Ferromagnetic semiconductor (In,Ga,Mn)As with Curie temperature above 100 K [J].

Slupinski, T ;

Munekata, H ;

Oiwa, A .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1592-1594

[10] PREPARATION OF TEM PLAN-VIEW AND CROSS-SECTIONAL SPECIMENS OF ZNSE/GAAS EPILAYERS BY CHEMICAL THINNING AND ARGON ION MILLING [J].

WANG, N ;

FUNG, KK .

ULTRAMICROSCOPY, 1995, 60 (03) :427-435

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