InGaN/GaN/AlGaN-based laser diodes grown an GaN substrates with a fundamental transverse made

被引：93

作者：

Nakamura, S ^{[1
]}

Senoh, M ^{[1
]}

Nagahama, S ^{[1
]}

Iwasa, N ^{[1
]}

Yamada, T ^{[1
]}

Matsushita, T ^{[1
]}

Kiyoku, H ^{[1
]}

Sugimoto, Y ^{[1
]}

Kozaki, T ^{[1
]}

Umemoto, H ^{[1
]}

Sano, M ^{[1
]}

Chocho, K ^{[1
]}

机构：

[1] Nichia Chem Ind Ltd, Dept Res & Dev, Tokushima 774, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1998年 / 37卷 / 9AB期

关键词：

GaN; InGaN; quantum well; laser; lifetime; transverse mode; GaN substrate;

D O I：

10.1143/JJAP.37.L1020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An InGaN multiquantum-well (MQW)-structure laser diode (LD) was erown on an epitaxially laterally overgrown GaN un sapphire. The lowest threshold current densities between 1.2 and 2.8 kA/cm(2) were obtained when the number of InGaN well layers was two. The InGaN MQW LD was grown an a free-standing GaN substrate that was obtained by removing the sapphire substrate. The LDs with cleaved mirror facets showed an output power as high as 30 mW under room-temperature continuous-wave (CW) operation. The stable fundamental transverse mode was observed by reducing the ridge width to a value as small as 2 mu m. The lifetime of the LDs at a constant output power of 5 mW was about 160 h under CW operation at an ambient temperature of 50 degrees C, due to a high threshold current density of 6 kA/cm(2).

引用

页码：L1020 / L1022

页数：3

共 13 条

[1] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
Bulman, GE
Doverspike, K
Sheppard, ST
Weeks, TW
Kong, HS
Dieringer, HM
Edmond, JA
Brown, JD
Swindell, JT
Schetzina, JF
[J]. ELECTRONICS LETTERS, 1997, 33 (18) : 1556 - 1557
[2] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates
Itaya, K
Onomura, M
Nishio, J
Sugiura, L
Saito, S
Suzuki, M
Rennie, J
Nunoue, SY
Yamamoto, M
Fujimoto, H
Kokubun, Y
Ohba, Y
Hatakoshi, G
Ishikawa, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B): : L1315 - L1317
[3] InGaN laser diode grown on 6H-SiC substrate using low-pressure metal organic vapor phase epitaxy
Kuramata, A
Domen, K
Soejima, R
Horino, K
Kubota, S
Tanahashi, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (9AB): : L1130 - L1132
[4] Mack MP, 1997, MRS INTERNET J N S R, V2, part. no.
[5] High-power, long-lifetime InGaN/GaN/AlGaN-based laser diodes grown on pure GaN substrates
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Kiyoku, H
Sugimoto, Y
Kozaki, T
Umemoto, H
Sano, M
Chocho, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (3B): : L309 - L312
[6] InGaN-based multi-quantum-well-structure laser diodes
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Kiyoku, H
Sugimoto, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B): : L74 - L76
[7] INSITU MONITORING OF GAN GROWTH USING INTERFERENCE EFFECTS
NAKAMURA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (08): : 1620 - 1627
[8] Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Sugimoto, Y
Kiyoku, H
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4056 - 4058
[9] SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES
NAKAMURA, S
SENOH, M
IWASA, N
NAGAHAMA, S
YAMADA, T
MUKAI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B): : L1332 - L1335
[10] Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
Nakamura, S
Senoh, M
Nagahama, S
Iwasa, N
Yamada, T
Matsushita, T
Kiyoku, H
Sugimoto, Y
Kozaki, T
Umemoto, H
Sano, M
Chocho, K
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (16) : 2014 - 2016

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