Flower-like distributed self-organized Ge dots on patterned Si (001) substrates

被引：3

作者：

Lee, HM ^{[1
]}

Yang, TH

Luo, GL

Chang, EY

机构：

[1] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Microelect & Informat Syst Res Ctr, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 6B期

关键词：

self-organized Ge dots; ultra high vacuum chemical molecular epitaxy; electron beam lithography; scanning electron microscopy; atomic force microscopy; mesa;

D O I：

10.1143/JJAP.42.L718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-organized Ge dots were obtained utilizing ultra high vacuum chemical molecular epitaxial growth of Ge on electron beam lithographically patterned Si (001) substrates. The dimensions of these etched Si mesa are 65/23/200 nm in diameter/height/period. The sizes and arrangement of the Ge dots were characterized by scanning electron microscopy and atomic force microscopy. The Ge dots have an average base width of 10 nm and the size is quite uniform. Due to the energetically favorable sites, the Ge dots tend to form homocentrically along the Si mesa edge, and their distribution is flower-like. [DOI: 10.1143/JJAP.42.L718].

引用

页码：L718 / L720

页数：3

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