Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers

被引：5

作者：

Bhattacharya, P ^{[1
]}

Yuan, Y

Brock, T

Caneau, C

Bhat, R

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] BELLCORE, Red Bank, NJ 07701 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 06期

关键词：

distributed feedback; semiconductor laser;

D O I：

10.1109/68.681481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature dependent threshold current and spectral output characteristics of InP-based 1.55-mu m distributed-feedback (DFB) ridge lasers made by metal-organic vapor phase epitaxial growth and regrowth, electron-beam lithography and grating formation, and reactive ion etching (RIE) have been characterized. Single-mode operation and T-o as high as 120 K at room temperature and below are measured. The high value of T-o is predominantly attributed to the tunnel injection design incorporated in the active region.

引用

页码：778 / 780

页数：3

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