p-type conduction in wide-gap Zn1-xMgxO films grown by ultrasonic spray pyrolysis -: art. no. 092101

被引：65

作者：

Zhang, X ^{[1
]}

Li, XM ^{[1
]}

Chen, TL ^{[1
]}

Zhang, CY ^{[1
]}

Yu, WD ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.2035326

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

p-type Zn1-xMgxO films doped with N and Al have been deposited by means of introducing Mg into p-type N- and Al-doped ZnO films using ultrasonic spray pyrolysis (USP) method. The structure of the films is confirmed by x-ray diffraction. Hall-effect measurements indicate that the p-type Zn1-xMgxO film shows a low resistivity of 6.4x10(-2) Omega cm, high mobility of 11.7 cm(2)/V s and high carrier concentration of 8.31x10(18) cm(-3) at room temperature. Furthermore, the optical absorption edge and photoluminescence (PL) peak of p-type Zn1-xMgxO film shift to a shorter wavelength of 356 nm while maintaining excellent electrical performances. The blueshift extent of the film based on p-type ZnO film was not as distinct as compared to that of Zn1-xMgxO film based on pure ZnO film, perhaps owing to the variations in the effectiveness of Mg incorporation in the p-type Zn1-xMgxO film and in the Zn1-xMgxO film.

引用

页数：3

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