4H-SiC normally-off vertical junction field-effect transistor with high current density

被引：56

作者：

Tone, K ^{[1
]}

Zhao, JH

Fursin, L

Alexandrov, P

Weiner, M

机构：

[1] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 07期

关键词：

implantation; normally-off switch; power JFET; silicon carbide;

D O I：

10.1109/LED.2003.815000

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

4H-silicon carbide (SiC) normally-off vertical junction field-effect transistor (JFET) is developed in a purely vertical configuration without internal lateral JFET gates. The 2.1-mum vertical p(+) n junction gates are created on the side walls of deep trenches by tilted aluminum (Al) implantation. Normally-off operation with blocking voltage V-bl of 1 726 V is demonstrated with an on-state current density of 300 A/cm(2) at a drain voltage of 3 V The low specific on-resistance Ron-sp of 3.6 mOmegacm(2) gives the V-bl(1)/Ron-sp value of 830 MW/cm(2), surpassing the past records of both unipolar and bipolar 4H-SiC power switches.

引用

页码：463 / 465

页数：3

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