Output power enhancement of GaN light emitting diodes with p-type ZnO hole injection layer

被引：20

作者：

Kim, B. J. ^{[1
]}

Ryu, Y. R. ^{[2
]}

Lee, T. S. ^{[2
]}

White, H. W. ^{[2
]}

机构：

[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA

[2] MOXtronics Inc, Columbia, MO 65203 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

arsenic; current density; gallium compounds; III-V semiconductors; II-VI semiconductors; light emitting diodes; semiconductor thin films; wide band gap semiconductors; zinc compounds; HYBRID BEAM DEPOSITION; EFFICIENCY; FABRICATION;

D O I：

10.1063/1.3097243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report an enhancement of the optical output power of GaN light emitting diodes (LEDs) by addition of a p-type ZnO layer located in close proximity to the active layer (ZnO/GaN LEDs). Arsenic (As)-doped p-ZnO was used as a hole-injecting layer to overcome the drop in external quantum efficiency of GaN LEDs at high drive currents-the so-called "efficiency droop." The output power in ZnO/GaN LEDs was improved up to 40%. This result is useful for development of highly efficient GaN LEDs operating at high current densities that will play a critical role in replacement of incandescent lamps by high efficiency solid-state light bulbs.

引用

页数：3

共 15 条

[1] Fabrication and characterization of n-ZnO/p-AlGaN heterojunction light-emitting diodes on 6H-SiC substrates [J].

Alivov, YI ;

Kalinina, EV ;

Cherenkov, AE ;

Look, DC ;

Ataev, BM ;

Omaev, AK ;

Chukichev, MV ;

Bagnall, DM .

APPLIED PHYSICS LETTERS, 2003, 83 (23) :4719-4721

[2] On the importance of radiative and Auger losses in GaN-based quantum wells [J].

Hader, J. ;

Moloney, J. V. ;

Pasenow, B. ;

Koch, S. W. ;

Sabathil, M. ;

Linder, N. ;

Lutgen, S. .

APPLIED PHYSICS LETTERS, 2008, 92 (26)

[3] Temperature dependence of performance of InGaN/GaN MQW LEDs with different indium compositions [J].

Huh, C ;

Schaff, WJ ;

Eastman, LF ;

Park, SJ .

IEEE ELECTRON DEVICE LETTERS, 2004, 25 (02) :61-63

[4] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101 [J].

Hwang, DK ;

Kang, SH ;

Lim, JH ;

Yang, EJ ;

Oh, JY ;

Yang, JH ;

Park, SJ .

APPLIED PHYSICS LETTERS, 2005, 86 (22) :1-3

[5]

KAMAKURA K, 2005, APPL PHYS LETT, V86, P52105, DOI DOI 10.1063/1.1861116

[6] Study of nonpolar m-plane InGaN/GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition [J].

Kim, Kwang-Choong ;

Schmidt, Mathew C. ;

Sato, Hitoshi ;

Wu, Feng ;

Fellows, Natalie ;

Jia, Zhongyuan ;

Saito, Makoto ;

Nakamura, Shuji ;

DenBaars, Steven P. ;

Speck, James S. .

APPLIED PHYSICS LETTERS, 2007, 91 (18)

[7] On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy [J].

Kim, W ;

Botchkarev, AE ;

Salvador, A ;

Popovici, G ;

Tang, H ;

Morkoc, H .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (01) :219-226

[8] Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes [J].

Masui, Hisashi ;

Ive, Tommy ;

Schmidt, Mathew C. ;

Fellows, Natalie N. ;

Sato, Hitoshi ;

Asamizu, Hirokuni ;

Nakamura, Shuji ;

Denbaars, Steven P. .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) :2112-2118

[9] Radiative recombination efficiency of InGaN-based light-emitting diodes evaluated at various temperatures and injection currents [J].

Masui, Hisashi ;

Sato, Hitoshi ;

Asamizu, Hirokuni ;

Schmidt, Mathew C. ;

Fellows, Natalie N. ;

Nakamura, Shuji ;

DenBaars, Steven P. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (25-28) :L627-L629

[10] P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B) :L8-L11

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