Temperature sensitivity of 1300-nm InGaAsN quantum-well lasers

被引：57

作者：

Tansu, N ^{[1
]}

Mawst, LJ ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect Comp Engn, Reed Ctr Photon, Madison, WI 53706 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2002年 / 14卷 / 08期

关键词：

diode lasers; InGaAs-GaAs QW; InGaAsN-GaAs QW; long-wavelength lasers; quantum-well lasers; strain; temperature analysis;

D O I：

10.1109/LPT.2002.1021966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The temperature sensitivity of metal-organic chemical vapor deposition (MOCVD)-grown highly strained (Deltaa/a similar to 2.7%) In0.4Ga0.6As- and In0.4Ga0.6As0.995N0.005 quantum-well (QW) active lasers, with lasing wavelength of 1.185 and 1.295 mum, respectively, is analyzed in terms of measured fundamental device parameters. From our analysis, the lower To values for the InGaAsN QW lasers can be explained in terms of the temperature dependence of the current injection efficiency, presumably due to increased carrier leakage in the InGaAsN QW lasers.

引用

页码：1052 / 1054

页数：3

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