The present status of quantum dot lasers

被引：111

作者：

Grundmann, M ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 1999年 / 5卷 / 03期

关键词：

quantum dots; semiconductor laser;

D O I：

10.1016/S1386-9477(99)00041-7

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We review the present status of the rapidly developing field of semiconductor laser diodes based on self-organized quantum dots (QDs). Several milestones have been achieved since the first realization of such a device in 1994: above room-temperature cw operation, the lowest threshold current density of any semiconductor laser diode, high temperature stability, an extended wavelength range on GaAs substrate and high power operation. After a brief introduction we discuss the tremendous advances in epitaxial growth, device performance, and theoretical understanding of QD lasers. Three applications of large commercial interest are discussed in detail: 1300nm QD lasers on GaAs substrate, QD surface emitting lasers, and high power QD lasers. Finally, we give an outlook on future developments. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：167 / 184

页数：18

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