Electrical characterization of ZnO-based homojunctions

被引：58

作者：

Lu, J. G. ^{[1
]}

Ye, Z. Z.

Yuan, G. D.

Zeng, Y. J.

Zhuge, F.

Zhu, L. P.

Zhao, B. H.

Zhang, S. B.

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

[2] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 05期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2245221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrical characteristics have been studied for ZnO p-n and p-i-n homojunctions, with optimization of device structures for improved performance. Capacitance-voltage measurements confirm the formation of abrupt junctions. The current-voltage characteristics exhibit their inherent electrical rectification behavior. The p-ZnO:(N,Al)/n-ZnO:Al homojunctions fabricated on sapphire substrates combining with the intrinsic ZnO buffer layer have acceptable p-n diode characteristics, with the forward turn-on voltage of 1.4 V and the reverse breakdown voltage of 5.3 V. By introduction of an intrinsic (Zn,Cd)O layer, the resultant p-ZnO:(N,Al)/i-(Zn,Cd)O/n-ZnO:Al homojunction exhibits a high reverse breakdown voltage of similar to 18 V.

引用

页数：3

共 18 条

[1] ZnO diode fabricated by excimer-laser doping [J].

Aoki, T ;

Hatanaka, Y ;

Look, DC .

APPLIED PHYSICS LETTERS, 2000, 76 (22) :3257-3258

[2] Synthesis and characterization of two-layer-structured ZnO p-n homojunctions by ultrasonic spray pyrolysis [J].

Bian, JM ;

Li, XM ;

Zhang, CY ;

Chen, LD ;

Yao, Q .

APPLIED PHYSICS LETTERS, 2004, 84 (19) :3783-3785

[3] Effect of annealing in oxygen radicals on luminescence and electrical conductivity of ZnO:N films [J].

Georgobiani, AN ;

Gruzintsev, AN ;

Volkov, VT ;

Vorob'ev, MO .

SEMICONDUCTORS, 2002, 36 (03) :265-269

[4] Fabrication and optoelectronic properties of a transparent ZnO homostructural light-emitting diode [J].

Guo, XL ;

Choi, JH ;

Tabata, H ;

Kawai, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (3A) :L177-L180

[5] ZnO p-n junctions produced by a new route [J].

Hazra, SK ;

Basu, S .

SOLID-STATE ELECTRONICS, 2005, 49 (07) :1158-1162

[6] p-type behavior in phosphorus-doped (Zn,Mg)O device structures [J].

Heo, YW ;

Kwon, YW ;

Li, Y ;

Pearton, SJ ;

Norton, DP .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3474-3476

[7] Near-UV emitting diodes based on a transparent p-n Junction composed of heteroepitaxially grown p-SrCu2O2 and n-Zno [J].

Hosono, H ;

Ohta, H ;

Hayashi, K ;

Orita, M ;

Hirano, M .

JOURNAL OF CRYSTAL GROWTH, 2002, 237 :496-502

[8] Contacts to p-type ZnMgO [J].

Kim, S ;

Kang, BS ;

Ren, F ;

Heo, YW ;

Ip, K ;

Norton, DP ;

Pearton, SJ .

APPLIED PHYSICS LETTERS, 2004, 84 (11) :1904-1906

[9] The future of ZnO light emitters [J].

Look, DC ;

Claflin, B ;

Alivov, YI ;

Park, SJ .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (10) :2203-2212

[10] p-type conduction in N-Al co-doped ZnO thin films [J].

Lu, JG ;

Ye, ZZ ;

Zhuge, F ;

Zeng, YJ ;

Zhao, BH ;

Zhu, LP .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3134-3135

← 1 2 →