Electron beam lithography - Resolution limits

被引:153
作者
Broers, AN
Hoole, ACF
Ryan, JM
机构
[1] Department of Engineering, University of Cambridge, Cambridge
[2] University of Natal, Durban
关键词
electron beam lithography; resolutions limits; PMMA; irradiated SiO2;
D O I
10.1016/0167-9317(95)00368-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electron beam lithography is generally accepted to have the highest practical resolution capability. In this paper the state of the art in terms of resolution is reviewed. This covers conventional resists such as PMMA, contamination resist, inorganic resists and damage processes. Some insights into the resolution limiting factors are given although the precise limitations still remain unclear. Consideration is also given as to the best measure of resolution and it is suggested that the minimum line spacing is a more appropriate and less subjective measure than minimum achievable feature size.
引用
收藏
页码:131 / 142
页数:12
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