Electrical properties of sulfur-passivated III-V compound devices

被引：18

作者：

Eftekhari, G ^{[1
]}

机构：

[1] SUNY Albany, Dept Elect & Comp Engn, New Paltz, NY 12561 USA

来源：

VACUUM | 2002年 / 67卷 / 01期

关键词：

passivation; III-V semiconductor surfaces; sulfidation; electrical properties;

D O I：

10.1016/S0042-207X(02)00195-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The results of numerous studies since 1987 show that sulfur passivation improves the electrical parameters of III-V compound devices. In this article, we examine the electrical parameters of metal-semiconductor contacts (MS), MS contacts with thin interfacial layer (MIS), and metal-oxide-semiconductor structures (MOS). (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：81 / 90

页数：10

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