Device Requirements for Optical Interconnects to Silicon Chips

被引:1631
作者
Miller, David A. B. [1 ]
机构
[1] Stanford Univ, Ginzton Lab, Stanford, CA 94305 USA
关键词
International Technology Roadmap for Semiconductors (ITRS) roadmap; optical interconnections; optical modulators; PHOTONIC CRYSTAL; HIGH-SPEED; ON-CHIP; OPTOELECTRONIC-VLSI; HIGH-PERFORMANCE; GERMANIUM PHOTODETECTOR; ELECTROOPTIC MODULATORS; SPATIAL-DISPERSION; SWITCHING NETWORK; QUANTUM-WELLS;
D O I
10.1109/JPROC.2009.2014298
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We examine the current performance and future demands of interconnects to and on silicon chips. We compare electrical and optical interconnects and project the requirements for optoelectronic and optical devices if optics is to solve the major problems of interconnects for future high-performance silicon chips. Optics has potential benefits in interconnect density, energy, and timing. The necessity of low interconnect energy imposes low limits especially on the energy of the optical output devices, with a similar to 10 fJ/bit device energy target emerging. Some optical modulators and radical laser approaches may meet this requirement. Low (e.g., a few femtofarads or less) photodetector capacitance is important. Very compact wavelength splitters are essential for connecting the information to fibers. Dense waveguides are necessary on-chip or on boards for guided wave optical approaches, especially if very high clock rates or dense wavelength-division multiplexing (WDM) is to be avoided. Free-space optics potentially can handle the necessary bandwidths even without fast clocks or WDM. With such technology, however, optics may enable the continued scaling of interconnect capacity required by future chips.
引用
收藏
页码:1166 / 1185
页数:20
相关论文
共 169 条
[21]   Optimization of VCSEL Structure for High-Speed Operation [J].
Chang, Yu-Chia ;
Coldren, Larry A. .
2008 IEEE 21ST INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2008, :159-160
[22]   High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding [J].
Chen, Long ;
Dong, Po ;
Lipson, Michal .
OPTICS EXPRESS, 2008, 16 (15) :11513-11518
[23]   Power comparison between high-speed electrical and optical interconnects for interchip communication [J].
Cho, H ;
Kapur, P ;
Saraswat, KC .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2004, 22 (09) :2021-2033
[24]   Performance comparisons between Cu/Low-κ, carbon-nanotube, and optics for future on-chip interconnects [J].
Cho, Hoyeol ;
Koo, Kyung-Hoae ;
Kapur, Pawan ;
Saraswat, Krishna C. .
IEEE ELECTRON DEVICE LETTERS, 2008, 29 (01) :122-124
[25]   Multiscale optical design for global chip-to-chip optical interconnections and misalignment tolerant packaging [J].
Christensen, MP ;
Milojkovic, P ;
McFadden, MJ ;
Haney, MW .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (02) :548-556
[26]   Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].
Chuang, Linus C. ;
Moewe, Michael ;
Chase, Chris ;
Kobayashi, Nobuhiko P. ;
Chang-Hasnain, Connie ;
Crankshaw, Shanna .
APPLIED PHYSICS LETTERS, 2007, 90 (04)
[27]   Optical gain and stimulated emission in periodic nanopatterned crystalline silicon [J].
Cloutier, SG ;
Kossyrev, PA ;
Xu, J .
NATURE MATERIALS, 2005, 4 (12) :887-891
[28]   Ge on Si p-i-n photodiodes operating at 10 Gbit/s [J].
Colace, L ;
Balbi, M ;
Masini, G ;
Assanto, G ;
Luan, HC ;
Kimerling, LC .
APPLIED PHYSICS LETTERS, 2006, 88 (10)
[29]   Performance constraints for onchip optical interconnects [J].
Collet, JH ;
Caignet, F ;
Sellaye, F ;
Litaize, D .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2003, 9 (02) :425-432
[30]   Transmitter equalization for 4-Gbps signaling [J].
Dally, WJ ;
Poulton, J .
IEEE MICRO, 1997, 17 (01) :48-56