Mn L3,2 x-ray absorption from (Ga,Mn)As and (Ga,Mn)N

被引：14

作者：

Edmonds, KW ^{[1
]}

Farley, NRS

Johal, TK

Campion, RP

Gallagher, BL

Foxon, CT

van der Laan, G

机构：

[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[2] SERC, Daresbury Lab, Warrington WA4 4AD, Cheshire, England

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 11期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.1667419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present Mn L-3,L-2 x-ray absorption measurements from two dilute magnetic semiconductor systems: p-type (Ga,Mn)As, which is ferromagnetic with T-C=140 K; and n-type (Ga,Mn)N, in which the magnetic impurities are predominantly paramagnetic. After removing a Mn-rich oxide surface layer by chemical etching, the Mn L-3,L-2 spectra from (Ga,Mn)As appear less localized than in previous reports, which is ascribed to screening due to p-d hybridization. Our results suggest that previous studies may have been influenced by the quality of the surface. In contrast, in the (Ga,Mn)N film the Mn ground state is closer to pure d(5). (C) 2004 American Institute of Physics.

引用

页码：7166 / 7168

页数：3

共 17 条

[1] Local structure and valence state of Mn in Ga1-xMnxN epilayers [J].

Biquard, X ;

Proux, O ;

Cibert, J ;

Ferrand, D ;

Mariette, H ;

Giraud, R ;

Barbara, B .

JOURNAL OF SUPERCONDUCTIVITY, 2003, 16 (01) :127-129

[2] The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers [J].

Campion, RP ;

Edmonds, KW ;

Zhao, LX ;

Wang, KY ;

Foxon, CT ;

Gallagher, BL ;

Staddon, CR .

JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) :311-316

[3] High-quality GaMnAs films grown with arsenic dimers [J].

Campion, RP ;

Edmonds, KW ;

Zhao, LX ;

Wang, KY ;

Foxon, CT ;

Gallagher, BL ;

Staddon, CR .

JOURNAL OF CRYSTAL GROWTH, 2003, 247 (1-2) :42-48

[4] Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].

Chiba, D ;

Takamura, K ;

Matsukura, F ;

Ohno, H .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022

[5] Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].

Dietl, T ;

Ohno, H ;

Matsukura, F ;

Cibert, J ;

Ferrand, D .

SCIENCE, 2000, 287 (5455) :1019-1022

[6] Mn interstitial diffusion in (Ga,Mn)As [J].

Edmonds, KW ;

Boguslawski, P ;

Wang, KY ;

Campion, RP ;

Novikov, SN ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT ;

Sawicki, M ;

Dietl, T ;

Nardelli, MB ;

Bernholc, J .

PHYSICAL REVIEW LETTERS, 2004, 92 (03) :4

[7] High-Curie-temperature Ga1-xMnxAs obtained by resistance-monitored annealing [J].

Edmonds, KW ;

Wang, KY ;

Campion, RP ;

Neumann, AC ;

Farley, NRS ;

Gallagher, BL ;

Foxon, CT .

APPLIED PHYSICS LETTERS, 2002, 81 (26) :4991-4993

[8] Spin resonance investigations of Mn2+ in wurtzite GaN and AlN films -: art. no. 165215 [J].

Graf, T ;

Gjukic, M ;

Hermann, M ;

Brandt, MS ;

Stutzmann, M ;

Ambacher, O .

PHYSICAL REVIEW B, 2003, 67 (16)

[9] Manganese concentration and low-temperature annealing dependence of Ga1-xMnxAs by x-ray absorption spectroscopy -: art. no. 233201 [J].

Ishiwata, Y ;

Watanabe, M ;

Eguchi, R ;

Takeuchi, T ;

Harada, Y ;

Chainani, A ;

Shin, S ;

Hayashi, T ;

Hashimoto, Y ;

Katsumoto, S ;

Iye, Y .

PHYSICAL REVIEW B, 2002, 65 (23) :1-4

[10] Ferromagnetism and high Curie temperature in semiconductor heterostructures with Mn δ-doped GaAs and p-type selective doping -: art. no. 241308 [J].

Nazmul, AM ;

Sugahara, S ;

Tanaka, M .

PHYSICAL REVIEW B, 2003, 67 (24)

← 1 2 →