Doping and hydrogen passivation of boron in silicon nanowires synthesized by laser ablation

被引：57

作者：

Fukata, N.

Chen, J.

Sekiguchi, T.

Okada, N.

Murakami, K.

Tsurui, T.

Ito, S.

机构：

[1] Natl Inst Mat Sci, Adv Elect Mat Ctr, Tsukuba, Ibaraki 3050044, Japan

[2] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Univ Tsukuba, Special Res Project Nanosci, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 20期

关键词：

D O I：

10.1063/1.2372698

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local vibrational modes of boron (B) in silicon nanowires (SiNWs) synthesized by laser ablation were observed at about 618 and 640 cm(-1) by Raman scattering measurements. Boron doping was performed during the growth of SiNWs. Fano [Phys. Rev. 124, 1866 (1961)] broadening was also observed in the Si optical phonon peak. These results prove that B atoms were doped in the SiNWs. Hydrogen (H) passivation of B acceptors in the SiNWs was also investigated. A broad peak was observed at around 650-680 cm(-1) after hydrogenation, demonstrating that B dopants were passivated by the formation of the well-known H-B passivation centers. (c) 2006 American Institute of Physics.

引用

收藏

页数：3

相关论文

共 28 条

[11] Formation of hydrogen-boron complexes in boron-doped silicon treated with a high concentration of hydrogen atoms [J].

Fukata, N ;

Fukuda, S ;

Sato, S ;

Ishioka, K ;

Kitajima, M ;

Hishita, T ;

Murakami, K .

PHYSICAL REVIEW B, 2005, 72 (24)

[12] Phonon confinement in silicon nanowires synthesized by laser ablation [J].

Fukata, N ;

Oshima, T ;

Okada, N ;

Kizuka, T ;

Tsurui, T ;

Ito, S ;

Murakami, K .

PHYSICA B-CONDENSED MATTER, 2006, 376 :864-867

[13] Hydrogen passivation of donors and hydrogen states in heavily doped n-type silicon [J].

Fukata, N ;

Sasaki, S ;

Fujimura, S ;

Haneda, H ;

Murakami, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (07) :3937-3941

[14] Phonon confinement effect of silicon nanowires synthesized by laser ablation [J].

Fukata, N ;

Oshima, T ;

Murakami, K ;

Kizuka, T ;

Tsurui, T ;

Ito, S .

APPLIED PHYSICS LETTERS, 2005, 86 (21) :1-3

[15] Direct synthesis of silicon nanowires, silica nanospheres, and wire-like nanosphere agglomerates [J].

Gole, JL ;

Stout, JD ;

Rauch, WL ;

Wang, ZL .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2346-2348

[16] REDISTRIBUTION OF ACCEPTOR + DONOR IMPURITIES DURING THERMAL OXIDATION OF SILICON [J].

GROVE, AS ;

SAH, CT ;

LEISTIKO, O .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (09) :2695-&

[17] MICROSCOPIC STRUCTURE OF BORON-HYDROGEN COMPLEXES IN CRYSTALLINE SILICON [J].

HERRERO, CP ;

STUTZMANN, M .

PHYSICAL REVIEW B, 1988, 38 (17) :12668-12671

[18] Structural and electrical properties of trimethylboron-doped silicon nanowires [J].

Lew, KK ;

Pan, L ;

Bogart, TE ;

Dilts, SM ;

Dickey, EC ;

Redwing, JM ;

Wang, YF ;

Cabassi, M ;

Mayer, TS ;

Novak, SW .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3101-3103

[19] Scanning tunneling microscopic study of boron-doped silicon nanowires [J].

Ma, DDD ;

Lee, CS ;

Lee, ST .

APPLIED PHYSICS LETTERS, 2001, 79 (15) :2468-2470

[20] A laser ablation method for the synthesis of crystalline semiconductor nanowires [J].

Morales, AM ;

Lieber, CM .

SCIENCE, 1998, 279 (5348) :208-211