GaInNAs for GaAs based lasers for the 1.3 to 1.5 μm range

We have investigated GaInAsN/GaAsN/AlGaAs quantum well lasers with emission wavelengths ranging from 1.3 to 1.5 mum grown by solid source molecular beam epitaxy using a radio-frequency source for nitrogen. P-doping is realized by carbon. In order to prevent any significant degradation of not intentionally N containing layers by residual nitrogen, the RF source is installed in its own UHV chamber separated from the growth chamber by a UHV valve. Broad area lasers, ridge waveguide and distributed feedback lasers have been investigated over the entire wavelength range. For 1.3 mum laser devices operation under cw condition is obtained. As expected the lasers have a high T-0 value which indicates the suitability of the devices for uncooled operation. With increasing wavelength the threshold current increases. Using GaAsN barriers instead of GaAs barriers the threshold current density of lasers in the 1.5 mum range is strongly reduced, giving rise to ridge waveguide lasers with threshold currents of less than 100 mA. These are the lowest threshold currents for GaAs based devices in the 1.5 mum range obtained to date. The peak pulse powers of the lasers exceed 100 mW. (C) 2002 Elsevier Science B.V. All rights reserved.