STRAIN ADJUSTMENT IN SI/SIGE SUPERLATTICES BY A SIGE ALLOY BUFFER LAYER

被引:10
作者
HERZOG, HJ [1 ]
JORKE, H [1 ]
KASPER, E [1 ]
MANTL, S [1 ]
机构
[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER
关键词
D O I
10.1149/1.2096396
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:3026 / 3030
页数:5
相关论文
共 17 条
[1]   STRAIN-INDUCED TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED SI/SIXGE1-X SUPERLATTICES [J].
ABSTREITER, G ;
BRUGGER, H ;
WOLF, T ;
JORKE, H ;
HERZOG, HJ .
PHYSICAL REVIEW LETTERS, 1985, 54 (22) :2441-2444
[2]   X-RAY DOUBLE-CRYSTAL DIFFRACTOMETRY OF GA1-XALXAS EPITAXIAL LAYERS [J].
BARTELS, WJ ;
NIJMAN, W .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :518-525
[3]   SILICON MOLECULAR-BEAM EPITAXY - 1984-1986 [J].
BEAN, JC .
JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :411-420
[4]   LATTICE PARAMETER + DENSITY IN GERMANIUM-SILICON ALLOYS [J].
DISMUKES, JP ;
PAFF, RJ ;
EKSTROM, L .
JOURNAL OF PHYSICAL CHEMISTRY, 1964, 68 (10) :3021-&
[5]   COMMENSURATE AND INCOMMENSURATE STRUCTURES IN MOLECULAR-BEAM EPITAXIALLY GROWN GEXSI1-X FILMS ON SI(100) [J].
FIORY, AT ;
BEAN, JC ;
FELDMAN, LC ;
ROBINSON, IK .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1227-1229
[6]  
HALLIWELL MAG, 1981, I PHYS C SER, V60, P271
[7]  
JORKE H, 1985, ELECTROCHEMICAL SOC, V857, P352
[8]   HIGH-SPEED INTEGRATED-CIRCUIT USING SILICON MOLECULAR-BEAM EPITAXY (SI-MBE) [J].
KASPER, E ;
WORNER, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (10) :2481-2486
[9]   ELASTIC STRAIN AND MISFIT DISLOCATION DENSITY IN SI0.92GE0.08 FILMS ON SILICON SUBSTRATES [J].
KASPER, E ;
HERZOG, HJ .
THIN SOLID FILMS, 1977, 44 (03) :357-370
[10]   ONE-DIMENSIONAL SIGE SUPERLATTICE GROWN BY UHV EPITAXY [J].
KASPER, E ;
HERZOG, HJ ;
KIBBEL, H .
APPLIED PHYSICS, 1975, 8 (03) :199-205