STUDY OF SOLID-PHASE AND MOLECULAR-BEAM EPITAXIAL COBALT SILICIDE FILMS ON SI(111) USING ELECTRON-ENERGY LOSS SPECTROSCOPY

被引：7

作者：

DEFRESART, E

KAO, YC

WANG, KL

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：645 / 648

页数：4

共 23 条

[11] UNIFORMITY AND CRYSTALLINE QUALITY OF COSI2/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND REACTIVE DEPOSITION EPITAXY [J].

KAO, YC ;

TEJWANI, M ;

XIE, YH ;

LIN, TL ;

WANG, KL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :596-599

[12]

KAO YC, 1985, UNPUB 1ST P INT S SI

[13]

KOLODZIEJ HB, 1975, ACTA PHYS POL A, V48, P765

[14] ELECTRON-ENERGY LOSS SPECTRA FOR FIRST TRANSITION SERIES [J].

MISELL, DL ;

ATKINS, AJ .

PHILOSOPHICAL MAGAZINE, 1973, 27 (01) :95-106

[15] COBALT DISILICIDE EPITAXIAL-GROWTH ON THE SILICON (111) SURFACE [J].

PIRRI, C ;

PERUCHETTI, JC ;

GEWINNER, G ;

DERRIEN, J .

PHYSICAL REVIEW B, 1984, 29 (06) :3391-3397

[16] TRANSIENT CAPACITANCE STUDY OF EPITAXIAL COSI2/SI(111)SCHOTTKY BARRIERS [J].

ROSENCHER, E ;

DELAGE, S ;

DAVITAYA, FA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :762-765

[17] SURFACE-STATE TRANSITIONS OF SILICON IN ELECTRON ENERGY-LOSS SPECTRA [J].

ROWE, JE ;

IBACH, H .

PHYSICAL REVIEW LETTERS, 1973, 31 (02) :102-105

[18] BONDING AND STRUCTURE OF COSI2 AND NISI2 [J].

TERSOFF, J ;

HAMANN, DR .

PHYSICAL REVIEW B, 1983, 28 (02) :1168-1170

[19] GROWTH OF SINGLE-CRYSTAL EPITAXIAL SILICIDES ON SILICON BY THE USE OF TEMPLATE LAYERS [J].

TUNG, RT ;

GIBSON, JM ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1983, 42 (10) :888-890

[20] EPITAXIAL SILICIDES [J].

TUNG, RT ;

POATE, JM ;

BEAN, JC ;

GIBSON, JM ;

JACOBSON, DC .

THIN SOLID FILMS, 1982, 93 (1-2) :77-90

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