THE ORIGIN OF RESIDUAL CARRIERS IN CVD-GROWN 3C-SIC

被引：11

作者：

OKUMURA, H

SHINOHARA, M

KURODA, S

ENDO, K

SAKUMA, E

MISAWA, S

YOSHIDA, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1988年 / 27卷 / 09期

关键词：

D O I：

10.1143/JJAP.27.1712

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1712 / 1717

页数：6

共 19 条

[1] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION
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[2] EXCITON RECOMBINATION RADIATION AND PHONON SPECTRUM OF 6H SIC
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[3] PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION
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EDMOND, JA
RYU, J
DAVIS, RF
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) : 2011 - 2016
[4] 3C-SIC P-N-JUNCTION DIODES
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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (22) : 1536 - 1537
[5] EXPERIMENTAL 3C-SIC MOSFET
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ISHII, K
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YAMANAKA, M
YOSHIDA, S
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) : 404 - 406
[6] GROWTH AND PROPERTIES OF BETA-SIC SINGLE CRYSTALS
NELSON, WE
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[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (01) : 333 - +
[7] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
NISHINO, S
POWELL, JA
WILL, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[8] PHOTOLUMINESCENCE OF UNINTENTIONALLY DOPED AND N-DOPED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION
OKUMURA, H
SHINOHARA, M
MUNEYAMA, E
DAIMON, H
YAMANAKA, M
SAKUMA, E
MISAWA, S
ENDO, K
YOSHIDA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (01): : L116 - L118
[9] HIGH-TEMPERATURE DEPLETION-MODE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS IN BETA-SIC THIN-FILMS
PALMOUR, JW
KONG, HS
DAVIS, RF
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (24) : 2028 - 2030
[10] COMPENSATION IN EPITAXIAL CUBIC SIC FILMS
SEGALL, B
ALTEROVITZ, SA
HAUGLAND, EJ
MATUS, LG
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (10) : 584 - 586

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