EPITAXIAL NECKING IN GAAS GROWN ON PRE-PATTERNED SI SUBSTRATES

We report a new method for the natural reduction of threading dislocations in GaAs on Si by growing on patterned Si substrates. We also explore other effects of patterning on dislocation formation during growth: stress relief near the mesa edges at high aspect ratios, and limited dislocation nucleation and propagation. Prior to growth, the Si substrates were processed to produce a plurality of mesas varying in width (5-170-mu-m) and geometry (circular, rectangular, and square mesas). After growth of the GaAs, the material was characterized with cathodoluminescence (CL) and secondary electron microscopy. For a GaAs growth temperature of 570-degrees-C and a thickness of 10-mu-m, the GaAs grown on the 40-mu-wide Si mesas show a factor of 1.6 increase in luminescence intensity over the luminescence intensity from the unpatterned control area. Also, the emission wavelength from the smaller mesas is shifted to shorter wavelengths as compared to GaAs/GaAs and the unpatterned control area. The emission wavelength and CL intensity varies across the mesas; for 40-mu-m wide mesas, the emission wavelength is fairly constant across the mesa and the CL intensity decreases near the edges, whereas for larger mesas the emission wavelength decreases and the CL intensity increases at the mesa edges. For the 40-mu-m wide mesas, the integrated CL intensity is equal to that of a control GaAs/GaAs grown with the same doping level. No cracks were observed in the GaAs grown on the Si mesas, even though the thickness of the GaAs was 10-mu-m.