EFFECT OF SHALLOW AND DEEP DONORS ON THE EQUILIBRIUM ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN A MODULATION-DOPED FIELD-EFFECT TRANSISTOR

被引：9

作者：

SUBRAMANIAN, S

VENGURLEKAR, AS

DIWAN, AA

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 05期

关键词：

D O I：

10.1109/T-ED.1986.22555

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：707 / 711

页数：5

共 19 条

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