EXPONENTIAL THERMAL EMISSION TRANSIENTS FROM DX CENTERS IN HEAVILY SI-DOPED GAAS

被引：11

作者：

CALLEJA, E ^{[1
]}

MOONEY, PM ^{[1
]}

THEIS, TN ^{[1
]}

WRIGHT, SL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期

关键词：

D O I：

10.1063/1.102986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The kinetics for the thermal emission of electrons from DX levels are shown to be exponential in heavily Si-doped GaAs. Isothermal voltage transients, obtained at constant capacitance, show a perfect exponential behavior. In contrast, a clear deviation from a single exponential function is observed when the transients are recorded at constant voltage, due to the nonuniform doping profile in these structures. The exponential emission kinetics seen in GaAs support the proposal that nonexponential emission kinetics observed at constant capacitance in AlxGa1-xAs are due to different emission rates for DX levels having different local atomic configurations in the alloy.

引用

页码：2102 / 2104

页数：3

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