ONE-STEP GROWTH OF BURIED HETEROSTRUCTURES BY CHEMICAL BEAM EPITAXY OVER PATTERNED INP SUBSTRATES

被引：2

作者：

RUDRA, A

SUGIURA, H

LING, J

BONARD, JM

GANIERE, JD

DEFAYS, M

ARAUJO, D

ILEGEMS, M

机构：

[1] Institute for Micro- and Optoelectronics, Ecole Polytechnique Fédérale de Lausanne

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 136卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)90404-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the formation of buried heterostructures obtained in a single growth step over nonplanar substrates patterned with ridges. When the ridge dimensions are large enough, the growth on the mesa top is similar to that on a planar substrate. In contrast, ridge spacings below almost-equal-to 10 mum influence the composition of the alloys grown on the ridge as well as those grown in the valley centre. The possible surface mechanisms which may explain this behaviour are discussed.

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页码：173 / 178

页数：6

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