REDUCTION OF THE SHORT-CHANNEL EFFECTS FOR GAAS-MESFETS BY DOUBLE SHALLOW N+-LAYERS

被引：5

作者：

ENOKI, T

SUGITANI, S

YAMASAKI, K

OHWADA, K

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 09期

关键词：

D O I：

10.1109/55.6948

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：470 / 472

页数：3

共 12 条

[1]

ASAI S, 1986, 18TH C SOL STAT DEV, P383

[2] ABOVE 10 GHZ FREQUENCY-DIVIDERS WITH GAAS ADVANCED SAINT AND AIR-BRIDGE TECHNOLOGY [J].

ENOKI, T ;

YAMASAKI, K ;

OSAFUNE, K ;

OHWADA, K .

ELECTRONICS LETTERS, 1986, 22 (02) :68-69

[3] 0.3-MU-M ADVANCED SAINT FETS HAVING ASYMMETRIC N+-LAYERS FOR ULTRA-HIGH-FREQUENCY GAAS MMICS [J].

ENOKI, T ;

YAMASAKI, K ;

OSAFUNE, K ;

OHWADA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :18-24

[4] SHALLOW IMPLANTS INTO GAAS [J].

GRAF, V ;

HEUBERGER, W .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :388-391

[5] COMPARISON OF RAPID THERMAL ANNEALING AND CONTROLLED-ATMOSPHERE ANNEALING OF ION-IMPLANTED GAAS [J].

KANBER, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 24-5 :575-580

[6]

MURAGUCHI M, 1986, 18TH C SOL STAT DEV, P379

[7] OPTIMIZATION OF N+ SELF-ALIGNED SHORT-CHANNEL NORMALLY-OFF GAAS-MESFETS BY TWO-DIMENSIONAL NUMERICAL DEVICE SIMULATION [J].

PASSLACK, M ;

STENZEL, R ;

ELSCHNER, H .

SOLID-STATE ELECTRONICS, 1987, 30 (02) :139-146

[8] TWO-DIMENSIONAL HOT-ELECTRON MODELS FOR SHORT-GATE-LENGTH GAAS-MESFETS [J].

SNOWDEN, CM ;

LORET, D .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :212-223

[9] NUMERICAL-SIMULATION OF GAAS-MESFETS INCLUDING VELOCITY OVERSHOOT [J].

STENZEL, R ;

ELSCHNER, H ;

SPALLEK, R .

SOLID-STATE ELECTRONICS, 1987, 30 (08) :873-877

[10] CHARACTERIZATION OF A THIN SI-IMPLANTED AND RAPID THERMAL ANNEALED N-GAAS LAYER [J].

SUGITANI, S ;

YAMASAKI, K ;

YAMAZAKI, H .

APPLIED PHYSICS LETTERS, 1987, 51 (11) :806-808

← 1 2 →