RAMAN-SCATTERING FROM RAPID THERMALLY ANNEALED TUNGSTEN SILICIDE

被引：7

作者：

KUMAR, S ^{[1
]}

DASGUPTA, S ^{[1
]}

JACKSON, HE ^{[1
]}

BOYD, JT ^{[1
]}

机构：

[1] UNIV CINCINNATI,DEPT PHYS,CINCINNATI,OH 45221

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 06期

关键词：

D O I：

10.1063/1.98188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：323 / 325

页数：3

共 15 条

[1] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY [J].

CHOW, TP ;

STECKL, AJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1480-1497

[2] RAMAN MICROPROBE ANALYSIS OF TUNGSTEN SILICIDE [J].

CODELLA, PJ ;

ADAR, F ;

LIU, YS .

APPLIED PHYSICS LETTERS, 1985, 46 (11) :1076-1078

[3] ELECTRONIC TRANSPORT-PROPERTIES OF TANTALUM DISILICIDE THIN-FILMS [J].

HUANG, MT ;

MARTIN, TL ;

MALHOTRA, V ;

MAHAN, JE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (03) :836-845

[4] RAPID ANNEALING OF TUNGSTEN POLYCIDE FILMS USING HALOGEN LAMPS [J].

KATO, J ;

ASAHINA, M ;

SHIMURA, H ;

YAMAMOTO, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) :794-798

[5]

KUMAR S, UNPUB

[6] ELECTRICAL TRANSPORT PROPERTIES OF TUNGSTEN SILICIDE THIN FILMS. [J].

Li, B.Z. ;

Aitken, R.G. .

Applied Physics Letters, 1985, 46 (04) :401-403

[7] THERMAL-OXIDATION OF SILICIDES [J].

LIE, LN ;

TILLER, WA ;

SARASWAT, KC .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) :2127-2132

[8] Electronic transport and microstructure in MoSi2 thin films [J].

Martin, T. L. ;

Mahan, J. E. .

JOURNAL OF MATERIALS RESEARCH, 1986, 1 (03) :493-502

[9] RESISTIVITY AND OXIDATION OF TUNGSTEN SILICIDE THIN-FILMS [J].

MILLER, RJ .

THIN SOLID FILMS, 1980, 72 (03) :427-432

[10] PROPERTIES OF SPUTTERED TUNGSTEN SILICIDE FOR MOS INTEGRATED-CIRCUIT APPLICATIONS [J].

MOHAMMADI, F ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (02) :450-454

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