RAPID ANNEALING OF TUNGSTEN POLYCIDE FILMS USING HALOGEN LAMPS

被引：6

作者：

KATO, J

ASAHINA, M

SHIMURA, H

YAMAMOTO, Y

机构：

[1] SEIKO EPSON CORP,DEPT RES & DEV,OWA SUWA,NAGANO,JAPAN

[2] HOSEI UNIV,ION BEAM TECHNOL RES CTR,KOGANEI,TOKYO 184,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期

关键词：

D O I：

10.1149/1.2108679

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：794 / 798

页数：5

共 11 条

[1]

CHU WK, 1978, BACKSCATTERING SPECT, P82

[2]

HARA T, 1984, JPN J APPL PHYS, V23, P455

[3] CHARACTERIZATION OF RAPIDLY ANNEALED MO-POLYCIDE [J].

HO, VQ ;

NAGUIB, HM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :896-898

[4] THE BEHAVIOR OF BORON (ALSO ARSENIC) IN BILAYERS OF POLYCRYSTALLINE SILICON AND TUNGSTEN DISILICIDE [J].

JAHNEL, F ;

BIERSACK, J ;

CROWDER, BL ;

DHEURLE, FM ;

FINK, D ;

ISAAC, RD ;

LUCCHESE, CJ ;

PETERSSON, CS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7372-7378

[5] RAPID ANNEALING USING HALOGEN LAMPS [J].

KATO, J ;

IWAMATSU, S .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (05) :1145-1152

[6] PHOSPHORUS DIFFUSION USING SPIN-ON PHOSPHOSILICATE-GLASS SOURCE AND HALOGEN LAMPS [J].

KATO, J ;

ONO, Y .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) :1730-1732

[7] COMPOSITE TASI2/N + POLY-SI FORMATION BY RAPID THERMAL ANNEALING [J].

KWONG, DL ;

KWOR, R ;

TSAUR, BY .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (05) :133-135

[8] DOPANT DIFFUSION IN TUNGSTEN SILICIDE [J].

PAN, P ;

HSIEH, N ;

GEIPEL, HJ ;

SLUSSER, GJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3059-3062

[9] SHORT-TIME ANNEALING OF COEVAPORATED TUNGSTEN SILICIDE FILMS [J].

SEDGWICK, TO ;

DHEURLE, FM ;

COHEN, SA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2446-2451

[10] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON [J].

TSAI, MY ;

DHEURLE, FM ;

PETERSSON, CS ;

JOHNSON, RW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5350-5355

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