SCHOTTKY CHARACTERISTICS OF GAAS SURFACE CLEANED BY ULTRASONIC RUNNING DEIONIZED WATER-TREATMENT

被引：8

作者：

HIROTA, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo 180

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 14期

关键词：

D O I：

10.1063/1.110606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky characteristics for n-type (001)-GaAs surfaces prepared by ultrasonic running deionized water treatment (URDIW) are investigated by measuring Schottky diodes. Schottky barrier height for the URDIW treated surfaces is more sensitive to the metal work function, and is smaller compared to those of the chemically etched surfaces. We discuss Schottky characteristics for the URDIW treated surfaces based on the hydrogen-terminated model.

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页码：1936 / 1938

页数：3

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