STABILITY OF ELECTRICAL-PROPERTIES OF NITROGEN-RICH, SILICON-RICH, AND STOICHIOMETRIC SILICON-NITRIDE FILMS

被引：47

作者：

LAU, WS

FONASH, SJ

KANICKI, J

机构：

[1] PENN STATE UNIV,ENGN SCI PROGRAM,UNIVERSITY PK,PA 16802

[2] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 06期

关键词：

D O I：

10.1063/1.344202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2765 / 2767

页数：3

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