SCANNING ELECTRON-BEAM ANNEALING OF ARSENIC-IMPLANTED AND BISMUTH-IMPLANTED SILICON

被引：3

作者：

BONTEMPS, A

SMITH, HJ

DANIELOU, R

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.331360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5258 / 5264

页数：7

共 19 条

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[2]

BONTEMPS A, UNPUB

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