CHEMICAL-REACTION AND SILICIDE FORMATION AT THE PT/SI INTERFACE

被引:43
作者
MATZ, R
PURTELL, RJ
YOKOTA, Y
RUBLOFF, GW
HO, PS
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1984年 / 2卷 / 02期
关键词
D O I
10.1116/1.572574
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:253 / 258
页数:6
相关论文
共 26 条
[11]   CHEMICAL BONDING AND ELECTRONIC-STRUCTURE OF PD2SI [J].
HO, PS ;
RUBLOFF, GW ;
LEWIS, JE ;
MORUZZI, VL ;
WILLIAMS, AR .
PHYSICAL REVIEW B, 1980, 22 (10) :4784-4790
[12]   ORIENTED GROWTH OF INTERFACIAL PTSI LAYER OR BETWEEN PT AND SI [J].
KAWAMURA, T ;
SHINODA, D ;
MUTA, H .
APPLIED PHYSICS LETTERS, 1967, 11 (03) :101-+
[13]   BEAM-LEAD TECHNOLOGY [J].
LEPSELTE.MP .
BELL SYSTEM TECHNICAL JOURNAL, 1966, 45 (02) :233-&
[14]   SOLID-SOLID REACTIONS IN PT-SI SYSTEMS [J].
MUTA, H ;
SHINODA, D .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (06) :2913-+
[15]   THE OXYGEN EFFECT IN THE GROWTH-KINETICS OF PLATINUM SILICIDES [J].
NAVA, F ;
VALERI, S ;
MAJNI, G ;
CEMBALI, A ;
PIGNATEL, G ;
QUEIROLO, G .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6641-6646
[16]   BARRIER HEIGHTS AND SILICIDE FORMATION FOR NI, PD, AND PT ON SILICON [J].
OTTAVIANI, G ;
TU, KN ;
MAYER, JW .
PHYSICAL REVIEW B, 1981, 24 (06) :3354-3359
[17]   KINETICS AND MECHANISM OF PLATINUM SILICIDE FORMATION ON SILICON [J].
POATE, JM ;
TISONE, TC .
APPLIED PHYSICS LETTERS, 1974, 24 (08) :391-393
[18]   SCHOTTKY-BARRIER FORMATION AT PD, PT, AND NI/SI(111) INTERFACES [J].
PURTELL, R ;
HOLLINGER, G ;
RUBLOFF, GW ;
HO, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :566-569
[19]   CRYSTALLOGRAPHIC ASPECTS OF THIN PTSI FILMS ON SI SUBSTRATES [J].
RICHARDS, BP ;
SCOBEY, IH ;
WALLACE, CA .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1974, 7 (APR1) :275-280
[20]   SI(111)-PT INTERFACE AT ROOM-TEMPERATURE - A SYNCHROTRON RADIATION PHOTOEMISSION-STUDY [J].
ROSSI, G ;
ABBATI, I ;
BRAICOVICH, L ;
LINDAU, I ;
SPICER, WE .
PHYSICAL REVIEW B, 1982, 25 (06) :3627-3636