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LASER GENERATED MICROSTRUCTURES

被引：75
作者：
RYTZFROIDEVAUX, Y
SALATHE, RP
GILGEN, HH
机构：
[1] TECH CTR, GENERALDIREKT PTT, CH-3030 BERN, SWITZERLAND
[2] COLUMBIA UNIV, DEPT ELECT ENGN, NEW YORK, NY 10028 USA
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1985年 / 37卷 / 03期
关键词：
D O I：
10.1007/BF00617497
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：121 / 138
页数：18
相关论文
共 161 条
[51]  
EHRLICH DJ, 1980, APPL PHYS LETT, V36, P916, DOI 10.1063/1.91366
[52]   LASER-INDUCED MICROSCOPIC ETCHING OF GAAS AND INP [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :698-700
[53]  
EHRLICH DJ, 1981, J ELECTROCHEM SOC, V128, P2039, DOI 10.1149/1.2127793
[54]   PHOTODEPOSITION OF METAL-FILMS WITH ULTRAVIOLET-LASER LIGHT [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :23-32
[55]   SUBMICROMETER-LINEWIDTH DOPING AND RELIEF DEFINITION IN SILICON BY LASER-CONTROLLED DIFFUSION [J].
EHRLICH, DJ ;
TSAO, JY .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :297-299
[56]   UV PHOTOLYSIS OF VANDERWAALS MOLECULAR FILMS [J].
EHRLICH, DJ ;
OSGOOD, RM .
CHEMICAL PHYSICS LETTERS, 1981, 79 (02) :381-388
[57]  
EHRLICH DJ, 1981, APPL PHYS LETT, V39, P957, DOI 10.1063/1.92624
[58]   LASER MICROPHOTOCHEMISTRY FOR USE IN SOLID-STATE ELECTRONICS [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (11) :1233-1243
[59]   ONE-STEP REPAIR OF TRANSPARENT DEFECTS IN HARD-SURFACE PHOTOLITHOGRAPHIC MASKS VIA LASER PHOTODEPOSITION [J].
EHRLICH, DJ ;
OSGOOD, RM ;
SILVERSMITH, DJ ;
DEUTSCH, TF .
ELECTRON DEVICE LETTERS, 1980, 1 (06) :101-103
[60]   LASER CHEMICAL TECHNIQUE FOR RAPID DIRECT WRITING OF SURFACE RELIEF IN SILICON [J].
EHRLICH, DJ ;
OSGOOD, RM ;
DEUTSCH, TF .
APPLIED PHYSICS LETTERS, 1981, 38 (12) :1018-1020
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