共 14 条
[4]
HORIUCHI M, IN PRESS NUCL INSTRU
[5]
A SYSTEMATIC ANALYSIS OF DEFECTS IN ION-IMPLANTED SILICON
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1988, 45 (01)
:1-34
[7]
DISLOCATION REACTIONS IN ARSENIC-IMPLANTED AND ANNEALED SILICON
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1976, 33 (02)
:793-805
[9]
MIYAUCHI E, 1983, JPN J APPL PHYS, V22, pL243
[10]
THE EFFECT OF RECOILED OXYGEN ON DAMAGE REGROWTH AND ELECTRICAL-PROPERTIES OF THROUGH-OXIDE IMPLANTED SI
[J].
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH,
1983, 209 (MAY)
:743-750