DEVELOPMENTS IN BROAD-BEAM ION-SOURCE TECHNOLOGY AND APPLICATIONS

被引：6

作者：

HARPER, JME ^{[1
]}

CUOMO, JJ ^{[1
]}

KAUFMAN, HR ^{[1
]}

机构：

[1] COLORADO STATE UNIV,DEPT PHYS,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.572128

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：337 / 339

页数：3

共 12 条

[1] MODIFICATION OF NIOBIUM FILM STRESS BY LOW-ENERGY ION-BOMBARDMENT DURING DEPOSITION
CUOMO, JJ
HARPER, JME
GUARNIERI, CR
YEE, DS
ATTANASIO, LJ
ANGILELLO, J
WU, CT
HAMMOND, RH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 349 - 354
[2] NITRIDE FILM DEPOSITION BY REACTIVE ION-BEAM SPUTTERING
ERLER, HJ
REISSE, G
WEISSMANTEL, C
[J]. THIN SOLID FILMS, 1980, 65 (02) : 233 - 245
[3] A NOVEL ANISOTROPIC DRY ETCHING TECHNIQUE
GEIS, MW
LINCOLN, GA
EFREMOW, N
PIACENTINI, WJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 1390 - 1393
[4] A METHOD FOR INCREASING THE ETCH-RATE RATIO OF OXIDES TO NON-OXIDES IN INERT-GAS ION MILLING PROCESSES
GERLACHMEYER, U
COBURN, JW
KAY, E
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) : 3362 - 3364
[5] ION-BEAM OXIDATION
HARPER, JME
HEIBLUM, M
SPEIDELL, JL
CUOMO, JJ
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (06) : 4118 - 4121
[6] HARPER JME, 1981, J ELECTROCHEM SOC, V128, P1077, DOI 10.1149/1.2127554
[7] COMBINED ION-BEAM DEPOSITION AND ETCHING FOR THIN-FILM STUDIES
HARPER, JME
GAMBINO, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1901 - 1905
[8] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .2. APPLICATIONS
HARPER, JME
CUOMO, JJ
KAUFMAN, HR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 737 - 756
[9] MODIFICATION OF EVAPORATED CHROMIUM BY CONCURRENT ION-BOMBARDMENT
HOFFMAN, DW
GAERTTNER, MR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 425 - 428
[10] TECHNOLOGY AND APPLICATIONS OF BROAD-BEAM ION SOURCES USED IN SPUTTERING .1. ION-SOURCE TECHNOLOGY
KAUFMAN, HR
CUOMO, JJ
HARPER, JME
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (03): : 725 - 736

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