SILICON-NITRIDE FILMS BY DIRECT RF SPUTTER DEPOSITION

被引：18

作者：

KOMINIAK, GJ ^{[1
]}

机构：

[1] SANDIA LABS, ALBUQUERQUE, NM 87115 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 09期

关键词：

D O I：

10.1149/1.2134441

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1271 / 1273

页数：3

共 58 条

[1] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS OBTAINED BY REACTION OF SIBR4 AND NH3
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[2] SILICON-NITRIDE COATINGS ON COPPER
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[3] INSULATOR CHARGE AND VFB STABILITY OF SNOS CAPACITORS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 907 - 911
[4] SOME PROPERTIES OF VAPOR DEPOSITED SILICON NITRIDE FILMS USING SIH4-NH3-H2 SYSTEM
BEAN, KE
GLEIM, PS
YEAKLEY, RL
RUNYAN, WR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (07) : 733 - &
[5] EFFECT OF ION-BOMBARDMENT DURING DEPOSITION ON THICK METAL AND CERAMIC DEPOSITS
BLAND, RD
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MATTOX, DM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (04): : 671 - 674
[6] SUBSTRATE BOMBARDMENT DURING RF SPUTTERING
BRODIE, I
LAMONT, LT
MYERS, DO
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 124 - &
[7] CHAUDHARI PK, 1974, J ELECTROCHEM SOC, V121, pC89
[8] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON-NITRIDE FILMS MEASURED IN STRONG ELECTRIC-FIELDS
CHAUDHARI, PK
FRANZ, JM
ACKER, CP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (07) : 991 - 993
[9] PREPARATION AND C-V CHARACTERISTICS OF SI-SI3N4 AND SI-SIO2-SI3N4 STRUCTURES
CHU, TL
SZEDON, JR
LEE, CH
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (09) : 897 - &
[10] DIELECTRIC MATERIALS IN SEMICONDUCTOR DEVICES
CHU, TL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (01): : 25 - +

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